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proprietary and confidential a microchip technology company ?2012 silicon storage technology, inc. ds75073b 06/12 data sheet www.microchip.com features ? high gain: C typically 30 db gain across 2.4~2.5 ghz over tempera- ture 0c to +85c ? high linear output power: C >28 dbm p1db - please refer to absolute maximum stress ratings on page 6 C meets 802.11g ofdm acpr requirement up to 23.5 dbm C ~3% added evm up to 20 dbm for 54 mbps 802.11g signal C meets 802.11b acpr requirement up to 23.5 dbm ? high power-added efficiency/low operating cur- rent for both 802.11g/b applications C ~34%/200 ma @ p out = 23.5 dbm for 802.11b/g ? single-pin low i ref power-up/down control Ci ref <2 ma ? low idle current C ~85 ma i cq for 12-contact xqfn C ~65 ma i cq for 6-contact xson ? high-speed power-up/down C turn on/off time (10%- 90%) <100 ns C typical power-up/down delay with driver delay included <200 ns ? low shut-down current (~2 a) ? high temperature stability C ~1 db gain/power variation between 0c to +85c ? excellent on-chip power detection ? 20 db dynamic range on-chip power detection ? simple input/output matching ? packages available C 12-contact xqfn C 2mm x 2mm C 6-contact xson C 1.5mm x 1.5mm ? all non-pb (lead-free) devices are rohs compliant applications ? wlan (ieee 802.11b/g/n) ? home rf ? cordless phones ? 2.4 ghz ism wireless equipment 2.4 ghz high-power, high-gain power amplifier sst12lp08 the sst12lp08 is a versatile power amplifier based on the highly-reliable ingap/gaas hbt technology. easily configured for linear high-power applications with excellent power-added efficiency while operating over the 2.4- 2.5 ghz frequency band, it typically provides 30 db gain with 34% power-added efficiency, while meeting 802.11b/g spectrum mask at 23.5 dbm. the sst12lp08 also features easy board-level usage along with high-speed power-up/down control through a single combined reference voltage pin and is offered in both 12-contact xqfn and 6-contact xson packages. downloaded from: http:///
proprietary and confidential ?2012 silicon storage technology, inc. ds75073b 06/12 2 2.4 ghz high-power, high-gain power amplifier sst12lp08 data sheet a microchip technology company product description the sst12lp08 is a versatile power amplifier based on the highly-reliable ingap/gaas hbt technology. the sst12lp08 can be easily configured for high-power applications with good power-added effi- ciency while operating over the 2.4- 2.5 ghz frequency band. it typically provides 30 db gain with 34% power-added efficiency (pae) @ pout = 23.5 dbm for 802.11b/g. the sst12lp08 has excellent linearity, typically ~3% added evm at 20 dbm output power which is essential for 54 mbps 802.11g operation while meeting 802.11g spectrum mask at 23.5 dbm. the sst12lp08 can also be easily configured for high-efficiency operation, typically ~3% added evm at 18 dbm output power and 95 ma total power consumption for 54 mbps 802.11g applications. high- efficiency operation is desirable in embedded applications, such as in hand-held units, where sst12lp08 can provide 30 db gain and meet 802.11b/g spectrum mask at 22 dbm output power with 34% pae. the sst12lp08 also features easy board-level usage along with high-speed power-up/down control through a single combined reference voltage pin. ultra-low reference current (total i ref ~2 ma) makes the sst12lp08 controllable by an on/off switching signal directly from the baseband chip. these fea- tures coupled with low operating current make the sst12lp08 ideal for the final stage power amplifi- cation in battery-powered 802.11b/g/n wlan transmitter applications. the sst12lp08 has an excellent on-chip, single-ended power detector, which features wide-range (>15 db) with db-wise linearization. the excellent on-chip power detector provides a reliable solution to board-level power control. the sst12lp08 is off ered in both 12-contact xqfn and 6-contact xson packages. see figure 3 for pin assignments and tables 1 and 2 for pin descriptions. downloaded from: http:///
proprietary and confidential ?2012 silicon storage technology, inc. ds75073b 06/12 3 2.4 ghz high-power, high-gain power amplifier sst12lp08 data sheet a microchip technology company functional blocks figure 1: functional block diagram 12-contact xqfn (qxb) figure 2: functional block diagram 6-contact xson (qx6) 12 nc 11 10 nc vcc1 7 98 vccb vref det ncrfout/vcc2 nc nc 2 13 rfin nc 45 6 1399 b1.0 bias circuit 1399f13.0 vcc1vccb vref rfin vcc2/rfoutdet 3 2 1 4 5 6 bias circuit downloaded from: http:///
proprietary and confidential ?2012 silicon storage technology, inc. ds75073b 06/12 4 2.4 ghz high-power, high-gain power amplifier sst12lp08 data sheet a microchip technology company pin assignments figure 3: pin assignments 12 nc 11 10 nc vcc1 7 98 vccb vref det ncrfout/vcc2 nc nc 2 13 rfin nc 45 6 1399 p1.0 top view (contacts facing down) 1399 f14.1 vcc1vccb vref rfin vcc2/rfoutdet 3 2 1 4 5 6 top view rf & dc ground 0 (contacts facing down) 12-contact xqfn 6-contact xson downloaded from: http:///
proprietary and confidential ?2012 silicon storage technology, inc. ds75073b 06/12 5 2.4 ghz high-power, high-gain power amplifier sst12lp08 data sheet a microchip technology company pin descriptions table 1: pin description for12-contact xqfn (qxb) symbol pin no. pin name type 1 1. i=input, o=output function gnd 0 ground low-inductance gnd pad nc 1 no connection unconnected pin rfin 2 i rf input, dc decoupled nc 3 no connection unconnected pin vccb 4 power supply pwr supply voltage for bias circuit vref 5 pwr 1 st and 2 nd stage idle current control det 6 o on-chip power detector nc 7 no connection unconnected pin vcc2/ rfout 8 power supply pwr/o power supply, 2 nd stage / rf output nc 9 no connection unconnected pin nc 10 no connection unconnected pin vcc1 11 power supply pwr power supply, 1 st stage nc 12 no connection unconnected pin t1.0 75073 table 2: pin description, 6-contact xson (qx6) symbol pin no. pin name type 1 1. i=input, o=output function gnd 0 ground low inductance gnd pad v cc1 1 power supply pwr power supply, 1 st stage rf in 2 i rf input, dc decoupled v ccb 3 power supply pwr supply voltage for bias circuit vref 4 pwr 1 st and 2 nd stage idle current control det 5 o on-chip power detector v cc2 / rfout 6 power supply pwr/o power supply, 2 nd stage/ rf output t2.0 75073 downloaded from: http:///
proprietary and confidential ?2012 silicon storage technology, inc. ds75073b 06/12 6 2.4 ghz high-power, high-gain power amplifier sst12lp08 data sheet a microchip technology company electrical specifications the ac and dc specifications for the power amplifier interface signals. refer to table 4 for the dc voltage and current specifications. refer to figures 4 through 11 for the rf performance. absolute maximum stress ratings (applied conditions greater than those listed under absolute maximum stress ratings may cause permanent damage to the device. this is a stress rating only and functional operation of the device at these conditions or conditions greater than those defined in the operational sections of this data sheet is not implied. exposure to absolute maximum stress rating con- ditions may affect device reliability.) input power to pin 2 (p in )..................................................... +5dbm average output power (p out ) 1 ................................................ +26dbm 1. never measure with cw source. pulsed single-tone source with <50% duty cycle is recommended. exceeding the max- imum rating of average output power could cause permanent damage to the device. supply voltage at pins 4, 8, and 11 (v cc ) for 12-contact xqfn .................. -0.3v to +5.0v supply voltage at pins 1, 3, and 6 (v cc ) for 6-contact xson .................... -0.3v to +5.0v reference voltage to pin 5 (v ref ) or 12-contact xqfn ......................... -0.3v to +3.3v reference voltage to pin 4 (v ref ) for 6-contact xson ......................... -0.3v to +3.3v dc supply current (i cc ) 2 ..................................................... 400ma 2. measured with 100% duty cycle 54 mbps 802.11g ofdm signal operating temperature (t a ) ............................................ -40oc to +85oc storage temperature (t stg )........................................... -40oc to +120oc maximum junction temperature (t j ) ........................................... +150oc surface mount solder reflow temperature ........................... 260c for 10 seconds table 3: operating range range ambient temp v cc industrial -40c to +85c 3.3v t3.0 75073 downloaded from: http:///
proprietary and confidential ?2012 silicon storage technology, inc. ds75073b 06/12 7 2.4 ghz high-power, high-gain power amplifier sst12lp08 data sheet a microchip technology company table 4: dc electrical characteristics at 25c symbol parameter min. typ max. unit test conditions v cc supply voltage at pins 4, 8, 11 for 12-contact xqfn 2.75 3.3 4.2 v figure 12 supply voltage at pins 1, 3, 6 for 6-contact xson 2.75 3.3 4.2 v figures 13 and 14 i cq idle current for 802.11g to meet evm ~3% @ 20 dbm for 12-contact xqfn 85 ma figure 12 idle current for 802.11g to meet evm ~3% @ 20 dbm for 6-contact xson 65 ma figure 13 idle current for 802.11g to meet evm ~3% @ 18 dbm for 6-contact xson 48 ma figure 14 i cc (802.11g) current consumption for 802.11g to meet evm ~3% @ 20 dbm for 12-contact xqfn 148 ma figure 12 current consumption for 802.11g to meet evm ~3% @ 20 dbm for 6-contact xson 140 ma figure 13 current consumption for 802.11g to meet evm ~3% @ 18 dbm for 6-contact xson 95 ma figure 14 i cc (802.11b/g) current consumption for 802.11b/g, 23.5 dbm for 12-contact xqfn 200 ma figure 12 current consumption for 802.11b/g, 23.5 dbm for 6-contact xson 200 ma figure 13 current consumption for 802.11b/g, 22 dbm for 6-contact xson 140 ma figure 14 v reg reference voltage for 12-contact xqfn with 75 ? resistor 2.75 2.85 2.95 v figure 12 reference voltage for 6-contact xson with 180 ? resistor 2.75 2.85 2.95 v figure 13 reference voltage for 6-contact xson with 390 ? resistor 2.75 2.85 2.95 v figure 14 t4.2 75073 table 5: ac electrical characteristics for configuration at 25c symbol parameter min. typ max. unit f l-u frequency range 2412 2484 mhz g small signal gain 29 30 db g var1 gain variation over band (2412C2484 mhz) 0.5 db g var2 gain ripple over channel (20 mhz) 0.2 db acpr meet 11b spectrum mask 23 dbm meet 11g ofdm 54 mbps spectrum mask 23 dbm added evm @ 20 dbm output with 11g ofdm 54 mbps signal 3 % 2f, 3f, 4f, 5f harmonics at 22 dbm, without external filters -40 dbc t5.2 75073 downloaded from: http:///
proprietary and confidential ?2012 silicon storage technology, inc. ds75073b 06/12 8 2.4 ghz high-power, high-gain power amplifier sst12lp08 data sheet a microchip technology company typical performance characteristics test conditions: v cc = 3.3v, t a = 25c, unless otherwise noted figure 4: s-parameters s11 versus frequency -30 -25 -20 -15 -10 -5 0 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 frequency (ghz) s11 (db) frequency (ghz) s21 (db) s22 (db) frequency (ghz) s12 (db) frequency (ghz) 1399 s-parms.1.1 s12 versus frequency -80 -70 -60 -50 -40 -30 -20 -10 0 0.01.02.03.04.05.06.07.0 s21 versus frequency -40 -30 -20 -10 0 10 20 30 40 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 s22 versus frequency -30 -25 -20 -15 -10 -5 0 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 downloaded from: http:///
proprietary and confidential ?2012 silicon storage technology, inc. ds75073b 06/12 9 2.4 ghz high-power, high-gain power amplifier sst12lp08 data sheet a microchip technology company typical performance characteristics test conditions: v cc = 3.3v, t a = 25c, 54 mbps 802.11g ofdm signal, equalizer training using sequence plus data figure 5: evm versus output power measured with sequence plus data channel estimation figure 6: power gain versus output power 1391 f4.1 evm versus output power 0 1 2 3 4 5 6 7 8 9 10 9 1011121314151617181920212223 output power (dbm) evm (%) freq=2.412 ghz freq=2.442 ghz freq=2.472 ghz 1391 f5.1 power gain versus output power 20 22 24 26 28 30 32 34 36 38 40 9 1011121314151617181920212223 output power (dbm) power gain (db) freq=2.412 ghz freq=2.442 ghz freq=2.472 ghz downloaded from: http:///
proprietary and confidential ?2012 silicon storage technology, inc. ds75073b 06/12 10 2.4 ghz high-power, high-gain power amplifier sst12lp08 data sheet a microchip technology company figure 7: total current consumption for 802.11g operation versus output power figure 8: pae versus output power 1391 f6.1 supply current versus output power output power (dbm) supply current (ma) 80 90 100 110 120 130 140 150 160 170 180 190 200 9 1011121314151617181920212223 freq=2.412 ghz freq=2.442 ghz freq=2.472 ghz 1391 f7.1 pae versus output power 0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 9 1011121314151617181920212223 output power (dbm) pae (%) freq=2.412 ghz freq=2.442 ghz freq=2.472 ghz downloaded from: http:///
proprietary and confidential ?2012 silicon storage technology, inc. ds75073b 06/12 11 2.4 ghz high-power, high-gain power amplifier sst12lp08 data sheet a microchip technology company figure 9: detector characteristics versus output power figure 10: 802.11g spectrum mask at 23.5 dbm, total current 200 ma 1391 f8.3 detector voltage versus output power detector voltage (v) output power (dbm) 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 012345678910111213141516171819202122232425 freq=2.412 ghz freq=2.442 ghz freq=2.472 ghz -70 -60 -50 -40 -30 -20 -10 0 10 2.3 5 2.4 0 2.45 2.50 2.55 freq = 2.412 ghz freq = 2.442 ghz freq = 2.472 ghz frequency (ghz) 1399 f9.0 amplitude (db) downloaded from: http:///
proprietary and confidential ?2012 silicon storage technology, inc. ds75073b 06/12 12 2.4 ghz high-power, high-gain power amplifier sst12lp08 data sheet a microchip technology company typical performance characteristics test conditions: v cc = 3.3v, t a = 25c, 1 mbps 802.11b cck signal figure 11: 802.11b spectrum mask at 23.5 dbm, total current 200ma -80 -70 -60 -50 -40 -30 -20 -10 0 10 2.35 2.40 2.45 2.50 2.55 freq = 2.412 ghz freq = 2.442 ghz freq = 2.484 ghz frequency (ghz) 1399 f10.0 amplitude (db) downloaded from: http:///
proprietary and confidential ?2012 silicon storage technology, inc. ds75073b 06/12 13 2.4 ghz high-power, high-gain power amplifier sst12lp08 data sheet a microchip technology company figure 12: typical schematic for 12-contact xqfn (qxb) for high-power applications figure 13: typical schematic for 6-contact xson (qx6) for high-power applications 50 /280 mil rfout 100 pf 100 pf 2.0 pf 50 / 140 mil rfin vref 4.7 f vcc 12 nh r1=75 0.1 f vdet 22 pf 1399 schematic 1.0 suggested operation conditions: 1. v cc = 3.3v 2. vreg=2.85v 1.0 pf 0.1 f 12 11 10 7 98 2 13 45 6 bias circuit 0.1 f 139 f15.1 4.7 f vcc f 12 nh 0.1 f 0.1 0.1 50 rfin f rfout 100 pf 2.0 pf 50 0.1 100 pf vreg r1 = 180 test conditions: vcc = 3.3 v vreg = 2.85 v 12lp08 1.5x1.5 6l xson top view 3 2 1 4 5 6 vdet 1.0 nh 2.0 nh 1.2 pf downloaded from: http:///
proprietary and confidential ?2012 silicon storage technology, inc. ds75073b 06/12 14 2.4 ghz high-power, high-gain power amplifier sst12lp08 data sheet a microchip technology company figure 14: typical schematic for 6-contact xson (qx6) for high-efficiency applications 139 f15.1 4.7 f vcc f 12 nh 0.1 f 0.1 0.1 50 rfin f rfout 100 pf 1.8 pf 50 0.1 100 pf vreg r1 = 390 test conditions: vcc = 3.3 v vreg = 2.85 v 12lp08 1.5x1.5 6l xson top view 3 2 1 4 5 6 vdet 1.2 nh 2.0 nh 1.2 pf downloaded from: http:///
proprietary and confidential ?2012 silicon storage technology, inc. ds75073b 06/12 15 2.4 ghz high-power, high-gain power amplifier sst12lp08 data sheet a microchip technology company product ordering information valid combinations for sst12lp08 sst12lp08 -qxbe sst12lp08 -qx6e sst12lp08 evaluation kits sst12lp08 -qxbe-k sst12lp08 -qx6e-k note: valid combinations are those products in mass production or will be in mass production. consult your sst sales representative to confirm availability of valid combinations and to determine availability of new combi- nations. sst 12 lp 08 - qxbe xx xx xx - xxxx environmental attribute e 1 = non-pb contact (lead) finish package modifier 6 = 6 contact b = 12 contact package type qx = xqfn/xson product family identifier product type p = power amplifier voltage l = 3.0-3.6v frequency of operation 2 = 2.4 ghz product line 1 = rf products 1. environmental suffix e denotes non-pb sol- der. sst non-pb solder devices are rohs compliant. downloaded from: http:///
proprietary and confidential ?2012 silicon storage technology, inc. ds75073b 06/12 16 2.4 ghz high-power, high-gain power amplifier sst12lp08 data sheet a microchip technology company packaging diagrams figure 15: 12-contact extremely-thin quad flat no-lead (xqfn) sst package code: qxb note: 1. complies with jedec jep95 mo-220j, variant veed-4 except external paddle nominal dimensions and pull-back of terminals from body edge. 2. the topside pin 1 indicator is laser engraved; its approximate shape and location is as shown. 3. from the bottom view, the pin 1 indicator may be either a curved indent or a 45-degree chamfer. 3. the external paddle is electrically connected to the die back-side and possibly to certain v ss leads. this paddle must be soldered to the pc board; it is required to connect this paddle to the v ss of the unit. connection of this paddle to any other voltage potential will result in shorts and electrical malfunction of the device. 4. untoleranced dimensions are nominal target dimensions. 5. all linear dimensions are in millimeters (max/min). 12-xqfn-2x2-qxb-2.0 0.4 bsc see notes 2 and 3 pin 1 0.250.15 0.92 0.05 max 0.340.24 0.500.40 top view bottom view side view 1mm 0.2650.165 pin 1 (laser engraved seenote2) 2.00 0.05 2.00 0.05 0.075 downloaded from: http:///
proprietary and confidential ?2012 silicon storage technology, inc. ds75073b 06/12 17 2.4 ghz high-power, high-gain power amplifier sst12lp08 data sheet a microchip technology company figure 16: 6-contact extremely-thin quad small outline no-lead (xson) sst package code: qx6 top view bottom view side view 0.500.40 0.75 pin # 1 1.50 0.10 pin #1 (laser engraved) 1.50 0.10 0.50 bsc 0.20 0.20 6-xson-1.5x1.5-qx6-1.0 1mm 0.05 max 0.70 see notes 2 and 3 1.20 note: 1. similar to jedec jep95 xqfn/xson variants, though number of contacts and some dimensions are different. 2. from the bottom view, the pin #1 indicator may be either a curved indent or a 45-degree chamfer. 3. the external paddle is electrically connected to the die back-side and to v ss . this paddle must be soldered to the pc board; it is required to connect this paddle to the v ss of the unit. connection of this paddle to any other voltage potential will result in shorts and electrical malfunction of the device. 4. untoleranced dimensions are nominal target dimensions. 5. all linear dimensions are in millimeters (max/min). downloaded from: http:///
proprietary and confidential ?2012 silicon storage technology, inc. ds75073b 06/12 18 2.4 ghz high-power, high-gain power amplifier sst12lp08 data sheet a microchip technology company table 6: revision history revision description date 00 ? initial release of data sheet apr 2009 01 ? revised figure 9 on page 11 may 2009 02 ? added information for qx6 package. ? revised table 4 aug 2009 03 ? updated electrical specifications and table 4 nov 2009 04 ? changed document status to data sheet. feb 2010 a ? applied new document format ? released document under letter revision system ? updated spec number from s71399 to ds75073 mar 2012 b ? updated figure 15 on page 16 to reflect new pin1 indicator ? updated test conditions statement on page 9 jun 2012 ? 2012 silicon storage technology, incCa microchip technology company. all rights reserved. sst, silicon storage technology, the sst logo, superflash, mtp, and flashflex are registered trademarks of silicon storage tech- nology, inc. mpf, sqi, serial quad i/o, and z-scale are trademarks of silicon storage technology, inc. all other trademarks and registered trademarks mentioned herein are the property of their respective owners. specifications are subject to change without notice. refer to www.microchip.com for the most recent documentation. for the most current package drawings, please see the packaging specification located at http://www.microchip.com/packaging. memory sizes denote raw storage capacity; actual usable capacity may be less. sst makes no warranty for the use of its products other than those expressly contained in the standard terms and conditions of sale. for sales office locations and information, please see www.microchip.com. silicon storage technology, inc. a microchip technology company www.microchip.com isbn:978-1-62076-384-1 downloaded from: http:///

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